個人簡介
陳益鋼 ，男，1970年9月生，上海大學材料學院教授，博導，東方學者。
教育簡歷
・ 1998 畢業於清華大學材料物理專業獲工學博士學位，師承中國科學院院士 柳百新教授；
・ 1998-2000 在德國卡爾斯魯厄研究中心作為洪堡研究員從事研究工作，聯繫導師 是O. Meyer博士和G. Linker博士；
・ 2000-2006 在日本的產業技術綜合研究所先後擔任日本科技廳STA研究員和JST/CREST研究員從事研究工作，聯繫導師分別是小林直人博士（現在為早稻田大學教授）和大串秀世博士；
・ 2006-2009 擔任產業技術綜合研究所（日本）常勤研究員；
・ 2009-至今 在上海大學材料學院任教。目前，領導一個壓電薄膜材料與器件研究小組，主要從事耐高溫等惡劣環境的壓電薄膜材料的製備及新型器件方面的研究開發工作，提出在氮化鋁二元系統中通過可控摻入過渡金屬元素的方法來大幅增強合金薄膜材料的壓電回響特性。在過去的研究中，先後用離子注入的方法合成金屬矽化物，在通常不能合金化的二元金屬系統中通過多層膜界面控制的方法合成多種非晶態合金和亞穩態合金相，系統研究了器件級同質外延金剛石薄膜的生長、微結構和電學性能並成功製備了多種基本電子器件和深紫外發光器件，系統研究並開發了極低溫度下使用的低功耗半導體器件，研製了低溫超導探測器並成功套用於飛行時間質譜分析。先後作為研究骨幹參加了德國政府研究項目一項、日本JST戰略研究項目兩項，上海市政府資助項目兩項，發表國際學術論文約40篇，獲得日本專利一項，申報國內發明專利5項。
獲獎和榮譽
1996年 國家教委科技進步三等獎；
1997年 第五屆“挑戰杯”一等獎；
1997年 年度SCI論文數全國排名第二（第一作者）；
1998年 北京市科技進步一等獎；
1998年 德國洪堡研究獎勵金
1999年 中國國家自然科學三等獎；
2000年 日本STA研究獎勵金
2002年 日本CREST研究獎勵金
2009年 上海市人才發展基金
2010年 上海市自然科學基金項目評審專家
研究領域
材料物理和電子材料及器件專業、主要從事五個方向的研究工作：
（1）材料的微結構和表面改性的研究；
（2）薄膜電子材料和器件的研究；
（3）超細粉體材料的合成和套用研究；
（4）航空功能材料的研究；
（5）離子束和固體的相互作用。
代表性論文
1. N. Zen, Y.G. Chen, K. Suzuki, M. Ohkubo, S. Miki and Zhen Wang, Development of Superconducting Strip Line Detectors (SSLDs) for Time-of-Flight Mass Spectrometers (TOF-MS), IEEE Transactions on Applied superconductivity 19, 354 (2009).
2. Y.G. Chen, T. Itatani, M. Ohkubo, n-channel GaAs MESFETs for cryogenic application, Physica Status Solidi C 5, 2805 (2008).
3. T. Makino, H. Kato, M. Ogura, H. Watanabe, S. Ri, Y.G. Chen, S. Yamasaki and H. Okushi, Electrical and optical characterizations of (001)-oriented homoepitaxial diamond p�n junction, Diamond and Related Materials 15, 513-516 (2006).
4. T. Makino, H. Kato, S. Ri, Y.G. Chen and H. Okushi, Electrical characterization of homoepitaxial diamond p-n+ junction, Diamond and Related Materials 14( no.11-12), 1995 (2005).
5. Y.G. Chen, M. Ogura, T. Makino, S. Yamasaki and H. Okushi, Diamond Schottky barrier diodes with low specific on-resistance, Semiconductor Science and Technology 20(No.12), 1203 (2005).
6. Y.G. Chen, M. Ogura, S. Yamasaki and H. Okushi, Ohmic contacts on p-type homoepitaxial diamond and their thermal stability, Semiconductor Science and Technology 20, 860(2005).
7. Y.G.Chen, M.Ogura and H.Okushi, Schottky junction properties on high quality B-doped homoepitaxial diamond thin films, Journal of Vacuum Science and Technology B 22(4), 2084 (2004).
8. Y.G.Chen, M.Ogura and H.Okushi, Investigation of specific contact resistance of ohmic contacts to B-doped homoepitaxial diamond using transmission line model, Diamond and Related Materials 13, 2121 (2004).
9. Y.G.Chen, M.Ogura, M.Kondo and H.Okushi, High performance diamond/amorphous silicon p-n+ heterojunctions，Applied Physics Letters 85 (11), 2110 (2004).
10. Y.G.Chen, M.Ogura, H.Okushi and N.Kobayashi, Characterization of capacitance-voltage features of Ni/diamond Schottky diodes on oxidized boron-doped homoepitaxial diamond film, Diamond and Related Materials 12 (8), 1340 (2003).
11. Y.G.Chen, M. Ogura, N. Kobayashi and H. Okushi, Temperature dependence and effect of series resistance on the electrical characteristics of metal/diamond Schottky diodes based on boron-doped homoepitaxial diamond films, Applied Physics Letters 82 (24), 4367 (2003).
12. Y.G.Chen, M.Hasegawa, H.Okushi, S.Koizumi, H.Yoshida, T.Sakai and N.Kobayashi, Electrical properties of graphite/homoepitaxial diamond contact, Diamond and Related Materials 11, 451(2002).
13. Y.G.Chen, M.Hasegawa, S.Yamanaka, H.Okushi and N.Kobayashi, Electrical properties of graphite/p-type homoepitaxial diamond contact, Materials Science Forum 389-393, 945 (2002).
14. Y.G.Chen and B.X.Liu, Interface-driven alloying and metallic glass formation in nano-multilayers in an immiscible Y-Nb system, Acta Materialia 47 (4), 1389 (1999).
15. C.Lin, Y.G.Chen and B.X.Liu, Sequential disordering observed during ion-induced amorphization in the Mo-Fe multilayered films, Nucl. instr. Meth. in Phys. Res. B 148, 946 (1999).
16. Y.G.Chen and B.X.Liu, Solid-state amorphization in Y-Nb and Au-Ta systems, Progress in Natural Science 9(3), 223 (1999).
17. Y.G.Chen and B.X.Liu, Metastable alloys synthesized by ion mixing in immiscible Ti-Nb and Ti-Ta systems, Materials Science and Engineering B 52, 1 (1998).
18. B.X.Liu and Y.G.Chen, Synthesis of metallic glasses in an immiscible Y-W system by solid-state reaction of multilayered films, Thin Solid Films 334, 201 (1998).
19. Y.G.Chen and B.X.Liu, Glass-forming ability of binary metal systems, Progress in Natural Science 8(2), 129 (1998).
20. C.Lin, Y.G.Chen and B.X.Liu, Amorphous Co-Mo alloy films obtained by alternate-deposition, phys. stat. sol. (a) 169, 105 (1998).
21. Y.G.Chen and B.X.Liu, Amorphous films formed through multilayer-technique in an immiscible Y-Mo system and their elastic properties, Journal of Physics D: Applied Physics 30, 510 (1997).
22. Y.G.Chen, B.X.Liu and Q.Zhang, Formation of amorphous alloys through multilayer-method in an immiscible Y-Nb system, Journal of Physics: Condensed Matter 9, 389 (1997).
23. Y.G.Chen and B.X.Liu, Observation of ion-induced alloy phase formation in an immiscible Y-Ta system, Journal of Non-Crystalline Solids 217, 308 (1997).
24. Y.G.Chen and B.X.Liu, Formation of amorphous films by solid-state reaction in an immiscible Y-W system, Applied Physics A 65, 73 (1997).
25. Y.G.Chen and B.X.Liu, Amorphous alloys formed by ion mixing or solid-state reaction in immiscible Y-refractory metal systems and their elastic properties, Nucl. Instr. Meth. in Phys. Res. B 127/128, 145 (1997).
26. Y.G.Chen and B.X.Liu, Irradiation-induced alloying in immiscible Cu-Mo system through multilayer-technique, Journal of Applied Physics 82, 3815 (1997).
27. Y.G.Chen and B.X.Liu, Interface-driven solid-state-alloying in an immiscible Cu-W system, Journal of Physics D: Applied Physics 30, 1729 (1997).
28. Y.G.Chen and B.X.Liu, Alloy phases formed in an immiscible Cu-Mo and Cu-W system by multilayer-technique, Journal of Alloys and Compounds 261, 217 (1997).
29. Y.G.Chen, Q.Zhang and B.X.Liu, Irradiation-induced alloying in an immiscible Ti-Ta system, Nucl. Instr. Meth. in Physics. Res. B 124, 523 (1997).
30. Y.G.Chen and B.X.Liu, Different driving force for metallic glass formation in Nb-Ni and Nb-Y systems by ion mixing and solid-state reaction, Mater. Lett. 33, 167 (1997).
31. Y.G.Chen and B.X.Liu, Multilayer-method to synthesize metallic glasses in immiscible Cu-Mo system, Chinese Physics Letters 14, 194 (1997).
32. B.X.Liu, Y.G.Chen and O.Jin, Progress on formation and theoretical modeling of metastable alloys studied by ion mixing of multilayered films, Chinese Journal of Materials Research (in English) 11, 561 (1997).
33. F.Pan, Y.G.Chen, Z.J.Zhang and B.X.Liu, Role of atomic size in the amorphous alloy formation in the Au-Ta system, Journal of Non-Crystalline Solids 194, 305 (1996).
34. Y.G.Chen and B.X.Liu, Amorphous films formed by solid-state reaction in an immiscible Y-Mo system and their structural relaxation, Applied Physics Letters 68, 3096 (1996).
35. Liu Baixin and Chen Yigang, Progress of alloying theoretical research in thin films, Physics (in Chinese) 11, 641 (1996).
36. D.H.Zhu, Y.G.Chen and B.X.Liu, Formation of a CoSi2 layer by Co ion implantation using a metal vapor vacuum arc ion source, Nucl. Instr. Meth. in Phys. Res. B 101, 394 (1995).
37. D.H.Zhu, Y.G.Chen and B.X.Liu, Metal vapor vacuum arc ion implantation to synthesize FeSi2 layers on Si(100) and Si(111), phys. stat. sol. (a) 152, 467 (1995).
38. D.H.Zhu, Y.G.Chen and B.X.Liu, A new silicidation technique by metal vapor vacuum arc ion implantation, Nucl. Instr. Meth. in Phys. Res. B 106, 1908 (1995).
39. F.Pan, Y.G.Chen and B.X.Liu, spontaneous vitrification in the Au-Ta system with a small size difference, Applied Physics Letters 67, 780 (1995).
