![許程[材料學副教授]](/img/c/3dc/nBnauM3XyITN5YDOwEzN2kTO0UTMyITNykTO0EDMwAjMwUzLxczL0gzLt92YucmbvRWdo5Cd0FmLxE2LvoDc0RHa.jpg "許程[材料學副教授]")
人物經歷
1999/09-2003/06，武漢理工大學，材料科學與工程，學士。
2003/09-2006/01，武漢理工大學，材料學，碩士。
2006/03-2009/02，中科院上海光學精密機械研究所，材料學，博士。
研究方向
材料科學與工程
主要貢獻
發表學術論文20多篇及發明專利3項。其中以第一作者發表論文11篇，SCI收錄7篇，EI收錄6篇。
1、High temperature annealing effect on structure, optical property and laser-induced damage threshold of Ta2O5 films, Appl. Surf. Sci. 254, 2008, 6554-6559. (SCI, EI)
2、Influence of SiO2 additional layers on the laser induced damage threshold of Ta2O5 films, Opt. Laser Technol. 40, 2008, 545-549. (SCI, EI)
3、Investigation of annealing effects on the laser-induced damage threshold of amorphous Ta2O5 films, Opt. Laser Technol. 2009, 41: 258-263. (SCI, EI)
4、Influence of different substrates on laser induced damage thresholds at 1064 nm of Ta2O5 films, Chin. Phys. Lett. 25, 2008, 1321-1324. (SCI)
5、Laser Induced Damage Threshold at 355 and 1064 nm of Ta2O5 Films of Different Phases, Chin. Phys. Lett. 25, 2008, 3300-3303. (SCI)
6、Laser-induced damage threshold in n-on-1 regime of Ta2O5 films at 532, 800 and 1064 nm, Chin. Opt. Lett. 12(5), 2007, 727-729. (SCI, EI)
7、Influences of SiO2 protective layers and annealing on the laser-induced damage threshold of Ta2O5 films. Chin. Opt. Lett. 6(3), 2008, 228-230. (SCI, EI)
8、不同方法製備的Ta2O5薄膜光學性能和雷射損傷閾值的對比分析,中國雷射, 2008,35:1595-1599. (EI)
9、PEMFC用Pt/CNTs電催化劑研究進展，電源技術,2004(10),652-655.
10、催化劑用納米鉑的製備方法研究,電池工業,11(5),2006,350-355.
11、導電聚苯胺穩定的納米鉑的合成,電池工業,11(6),2006,384-387.
