研究方向
研究內容 1
熱釋電材料與器件，包括熱釋電材料及其單元/多元器件、非分散紅外線(NDIR)氣體感測器、讀出電路及測試系統。
研究內容 2
氧化物功能薄膜生長技術研究，包括氧化物功能薄膜外延生長動力學、氧化物薄膜材料與半導體襯底集成生長。
學術成果
W. B. Luo, J. Zhu, Y. R. Li, X. P. Wang, D. Zhao, J. Xiong, and Y. Zhang. Effects of chemical fluctuations on microstructures and properties of multiferroic BiFeO3 thin films. Appl. Phys. Lett., 2007, 91, 082501.
W. B. Luo, J. Zhu, Y. R. Li, X. P. Wang, and Y. Zhang. Integration of （208） oriented epitaxial Hf-doped Bi4Ti3O12 with (0002) GaN using SrTiO3/TiO2 buffer layer. J. Appl. Phys., 2009, 105: 104102.
W. B. Luo, J. Zhu, H. Chen, X. P. Wang, Y. Zhang, and Y. R. Li. Improved crystalline properties of laser molecular beam epitaxy grown SrTiO3 by rutile TiO2 layer on hexagonal GaN. J. Appl. Phys. 2009, 106: 104120.
W. B. Luo, J. Zhu, Y. R. Li, Y. Zhang, and H. Chen. Epitaxial growth and ferroelectricity of BaTiO3 on SrRuO3/TiO2 buffered GaN. Ferroelectrics, 2010,406:46-61.
W. B. Luo, ; Zhu, J.; Zeng, H. Z, et al.Effects of SrTiO(3)/TiO(2) buffer layer on structural and electrical properties of BiFeO(3) thin films grown on GaN (0002),J. Appl. Phys. 2011, 109: 104108.
Luo, WB; Jing, J; Shuai, Y ; Zhu, J; Zhang, WL ; Zhou, S; Gemming, S; Du, N; Schmidt, H,Epitaxial growth of SrTiO3 (0 0 1) films on multilayer buffered GaN (0 0 0 2) by pulsed laser deposition,JOURNAL OF PHYSICS D-APPLIED PHYSICS. 2013, 46(6):065307
Luo, WB;Jing, J; Shuai, Y ; Zhu, J; Zhang, WL ; Zhou, S; Gemming, S; Du, N; Schmidt, H,Effects of the TiO2 buffer thickness on SrTiO3 (111) epitaxial films grown on GaN (0002),J. Appl. Phys. 2013, 113: 154103
Peng, QX ; Luo, WB; Meng, J ;; Fu, WY ;; Qing, X ;; Sun, XY ;; Shuai, Y ;; Wu, CG ;; Zhang, WL ,A new method of depositing high figure-of-merit porous PZT pyroelectric thick film using [001]-oriented PZT nanorod by electrophoresis deposition,JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2014, 25:297-302
Peng, QX; Luo, WB; Wu, CG ; Sun, XY; Li, P Chen, XY.,The fabrication and pyroelectric properties of single crystalline PZT nanorod synthesized by hydrothermal reaction,JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2014, 25,1627-1632
ABO3/MgO/GaN異質結構及其製備方法. 中國, 發明專利, 申請號:200910058648.3.CN101527314
ABO3/TiO2/MgO/Ⅲ-V族氮化物半導體異質結構及製備方法 中國，發明專利，CN101826550
一種補償型熱釋電紅外單元探測器，中國, 發明專利, CN103474502
一種厚膜熱釋電敏感元及其製備方法．中國，發明專利， 201510109992.6
