個人資料
林兆軍，山東大學物理學院微電子系教授，博導學習經歷
1980.9~1984.7: 河北大學電子系學習獲學士學位.1985.9~1988.7: 河北大學電子系學習獲碩士學位. 碩士論文內容是有關雷射輔助擴散製備淺結二極體和三極體研究.
1994.9~1997.7: 中國科學院半導體所學習獲博士學位. 博士論文內容是半導體量子點製備和性質研究.
科研經歷
1988.9~1994.7: 河北大學電子系從事教學和科研工作.
1997.9~1999.9: 北京大學微電子所做博士後研究, 研究GaN電子器件的製備工藝和器件特性.
1999.10~2000.9: 在加拿大的McMaster University做研究，開展了InGaAsP-InP多量子阱雷射器的研究工作。
2000.9月~2002.3: 在美國Northwestern University繼續研究工作，研究工作包括：GaInAs/AlInAs量子級聯雷射、GaN基蘭雷射和發光管。
2002.3~2003.9: 在美國Ohio State University，從事了AlGaN/GaN異質結構肖特基接觸及場效應電晶體的研製工作。
2003.12~現在: 山東大學物理學院工作.
研究領域
●AlGaN/GaN 異質結場效應電晶體研究近些年來，AlGaN/GaN異質結場效應電晶體（AlGaN/GaN HFET）一直作為半導體電子器件研究領域的熱點而引起人們的廣泛關注和極大興趣。AlGaN/GaN異質結構的肖特基接觸是AlGaN/GaN HFET的重要組成部分，肖特基接觸金屬對AlGaN勢壘層應變影響的機理至今還不清楚，而肖特基接觸金屬對AlGaN勢壘層應變的影響將改變AlGaN/GaN異質結構二維電子氣密度等相關參數，由此對AlGaN/GaN HFET器件特性產生重要影響。我們的研究擬在通過AlGaN勢壘層面極化電荷密度的分析計算，獲取肖特基接觸金屬對AlGaN勢壘層應變影響的信息，研究肖特基金屬電子與AlGaN勢壘層界面相互作用的機制，建立肖特基金屬對AlGaN/GaN異質結構AlGaN勢壘層應變影響的作用模型，以此推動GaN基電子器件研究的深入和發展。該研究包括器件製備、器件特性測試和器件特性分析.
●低維半導體材料與器件研究
用物理或化學方法製備低維半導體材料, 通過微電子微細加工工藝將其製備成低維器件, 研究該材料體系的電子能態結構、聲子能態結構、載流子輸運及器特性.
●SenTaurus-Device模擬分析半導體器件特性
利用SenTaurus-Device (業界標準器件的仿真)仿真工具，模擬分析新型半導體器件的器件特性，諸如電流-電壓（I-V）、電容-電壓（C-V）和頻率特性等.
教學任務
已承擔了本科生和研究生以下課程的教學工作.本科生課程: 半導體器件物理; 積體電路工藝.
研究生課程: 半導體器件理論; 超晶格材料與器件; 專業英語
正在參與項目：
1. 國家自然科學基金項目：肖特基接觸金屬對AlGaN勢壘層應變影響研究， 項目號：10774090, 金額：30.00萬元，研究期限：2008.01-2010.12. 項目負責人:林兆軍
2. 參與項目, 納米材料表面生化修飾與POPS的選擇性富 集；2007CB936602；973項目；2007年-2011年。參與者：林兆軍
發表論文
1 The influence of schottky contact metals on the strain of AlGaN barrier layersZhaojun Lin, Jianzhi Zhao, Timothy Corrigan, Zhen Wang, Zhidong You,
Zhanguo Wang, Wu lu,
Journal of Applied Physics, (2008), Vol.103, P044503.
2 Electron mobility related to scattering caused by the strain variation of AlGaN
barrier layer in strained AlGaN/GaN heterostructures
Jianzhi Zhao, Zhaojun Lin*, Timothy Corrigan, Zhen Wang,
Zhidong You, Zhanguo Wang,
Applied Physics letters, (2007), 91, P173507.
3 Threshold voltage of AlGaN/GaN HFET
Zhaojun Lin, Jianzhi zhao, Min Zhang,
Chinese Journal of Semiconductor, (2007), Vol.28, Supplement, P54-56.
4 Thermal stability of strained AlGaN/GaN heterostructures
Zhang Min, Xiao Hongdi, Lin Zhaojun*,
Chinese Physics letters, (2006), Vol.23(7), P1900-1902.
5 Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN/GaN heterostructures
Zhaojun Lin, Wu Lu
Journal of Applied Physics, (2006), 99, p014504-1
6 Quasi-Enhancement Mode of AlGaN/GaN HEMTs Grown on Sapphire Substrate
Jaesun Lee, Dongmin Liu, Zhaojun Lin, Wu Lu
Solid State Electronics, (2003), 47, pp2081-2084
7 Study of Schottky contacts on Strained AlGaN/GaN heterostructures
Zhaojun Lin, George R. Brandes, Wu Lu.
45th International Electronic Materials Conference, Salt Lake City, United States.
P57.
8 Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures
Zhaojun Lin, Wu Lu, Jaesun Lee, Dongmin Liu
Appl. Phys. Lett., (2004), 84 (9), pp.1585-1587
9 Influence of annealed Ohmic contact metals on the polarization of AlGaN barrier layer
Zhaojun Lin, Wu Lu, Jaesun Lee, Dongmin Liu
Electronics Letters, Vol. 39, Issue 19, (2003), pp. 1412-1414.
10 Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures:
Determination and effect of metal work functions
Zhaojun Lin, Wu lu, Jaesun Lee, Dongmin Liu
Appl. Phys. Lett., (2003), 82 (24), pp.4364-4366.
11 Characteristics of high quality p type AlxGa1-xN/GaN supper lattices
A. Yasan, R. McClintock, S. R. Darvish, Zhaojun Lin, K. Mi, P. Kung, and
M. Razeghi
Appl.Phys.Lett., (2002), 80 (12), pp.2108-2110.
12 Schottky barriers on n-GaN
Zhaojun Lin, Taiping Zhang, Guoying Wu
Chinese Journal of Semiconductor, (2000), 21(4), pp.369-372.
13 Study on CdSe nanoclusters by transmission electron microscope
Yan Xu, Zhaojun Lin, wei Chen, Keming Fang
Chinese Journal of Semiconductor, (1998), 19(3), pp.181-184.
14 Dielectric constant in quantum dots
Zhaojun Lin, Zhanguo Wang, Wei Chen, Lanying Lin
Chinese Science Bulletin, (1998), 43(7), pp.709-713.
15 Encapsulation and potential application of semiconductor clusters in zeolite
Molecular sieves
Wei Chen, Zhanguo Wang, Lanying Lin, Zhaojun Lin, Jiajun Qian
Progress in physics(in Chinese), (1997), 17(1), pp.83-117.
16 The preparation of I2 clusters and their absorption spectra
Zhaojun Lin, Zhanguo Wang, Wei Chen, Lanying Lin
Journal of Materials Science and Technology, (1997), 13(6), pp.518-520.
17 Formation, structure and fluorescence of CdS clusters in a mesoporous zeolite
Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin
Solid State Communications, (1997), 105(2), pp.129-134
18 Absorption and luminescence of the surface states in ZnS nanoparticles
Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin
Journal of Applied Physics, (1997), 82(6), pp.3111-3115.
19 New observation on the luminescence of CdS clusters in zeolite Y
Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin
Solid State Communications, (1997), 101(5), pp.371-375.
20 Thermoluminescence of ZnS nanoparticles
Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin
Appl.Phys.Lett., (1997), 70(11), pp.1465-1467.
21 Photoluminescence of ZnS clusters in zeolite Y
Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin
Journal of Materials Science and Technology, (1997), 13(5), pp.397-404.
22 Low temperature hFe of silicon bipolar transistor
Shiqun Bo, Zhaojun Lin
Chinese Journal of Semiconductor, (1997), 18(6), pp.454-458.
23 Absorption spectra of Se8-ring clusters in zeolite 5A
Zhaojun Lin, Zhanguo Wang, Wei Chen, Lanying Lin
Materials Science&Engineering B, (1997), 47, pp.91-95.
24 The preparation of I2 clusters and their diffusion reflection spectra
Zhaojun Lin, Zhanguo Wang, Wei Chen, Lanying Lin
Chinese Science Bulletin, (1997), 42(15), pp.1727-1728.
25 Influence of the ring-ring interaction in Se8-ring clusters on their absorption
Zhaojun Lin, Zhanguo Wang, Wei Chen, Lanying Lin
Journal of Materials Science Letters, (1997)16(9), pp.732-734.
26 Size-Dependence of luminescence intensity of ZnS clusters in zeolite Y
Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin
Proceeding of the 7th China-Japan conferences on materials science and crystal
Growth, (1996), pp.26-27.
27 Absorption and Raman spectra of Se chains in zeolite HZSM-5 and Y
Zhaojun Lin, Zhanguo Wang, Guohua Li, Wei Chen, Lanying Lin
Chinese Journal of Semiconductor, (1996), 17(12), pp.936-939.
28 New observation on the formation of PbS clusters in zeolite Y
Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin
Appl.Phys.Lett., (1996), 68(14), pp.1990-1992.
29 The formation of ZnS cluster in zeolite Y
Wei Chen, Zhaojun Lin, Zhanguo Wang, Lanying Lin
Chinese Journal of Semiconductor, (1996), 17(12), pp.928-931.
30 Absorption and Raman spectra of Se8-ring clusters in zeolite 5A
Zhaojun Lin, Zhanguo Wang, Wei Chen, Lanying Lin
Solid State Communications, (1996)100(12), pp.841-843.
31 Some new observation on the formation and optical properties of CdS clusters in
Zeolite Y
Wei Chen, Zhaojun Lin, Zhanguo Wang, Lanying Lin
Solid State Communications, (1996), 100(2), pp.101-104.
任職：
中國電子學會半導體與集成技術分會第七屆委員會委員；
Chinese Physics Letter 雜誌評審。
