人物簡介
在“九五”、“十五”和“十一五”期間，廣泛開展了SiC半導體技術的研發工作，其中包括MEMS器件用Si（矽）基SiC半導體材料異質外延生長技術、SiC功率半導體器件用SiC同質外延生長技術、以及SiC功率半導體器件和SiC MEMS器件製造技術。利用自有技術，先後研製出高溫SiC熱壁CVD外延生長設備（包括水平式與垂直式）、高溫退火裝置、高溫氧化裝置，並獲得國家發明專利和實用新型專利多項。在利用SiH4+C2H4+H2氣體系統和自主研製的熱壁CVD生長系統獲得高質量SiC外延材料的基礎上，先後研製出阻塞電壓大於1000V的Ti/4H-SiC Schottky二極體器件和阻塞電壓為300-500V的PiN二極體器件、SiC UV太陽光盲探測器、SiC MESFET器件以及3C-SiC諧振器（250kHz）和濾波器等。多年還從事過非晶矽半導體材料與器件技術和半導體致冷技術的研究與開發工作，曾獲得中國科學院科學技術成果獎（非晶矽中的亞穩缺陷及界面問題研究）、陝西省教育委員會科學技術進步獎（非晶碳化矽的電致發光特性及大面積發光二極體）和中國科學院留學回國擇優支持項目的資助。從九十年代至今在國內外主要學術刊物上發表研究論文六十餘篇，獲得國家發明和實用新型專利十餘項。
研究領域
第三代寬頻隙SiC半導體材料、物理與器件及產業化研究
完成項目
1.廣東省引進科研創新團隊（第二批）項目：（2011-2016）；
2.廣東省戰略性新型產業項目：（2013-2014）；
3.東莞市重大方向性項目：（2010-2013）；
4.中國科學院知識創新工程項目：（2010-2011）；
5.973”項目：“4H-SiC PiN結構材料研究”（2005-2010）；
6.中國科學院創新儀器設備項目：“大面積/多片SiC CVD系統研製”（2007-2009）；
7.自然科學基金：“3C-SiC厚膜生長及MOSFET器件研究”（2006-2009）；
8.“863”項目：“3C-SiC MEMS濾波器研究”（2005-2008）；
9.自然科學基金：“3C-SiC MEMS諧振器研究”（2005-2008）；
10.“863”項目：“SiC探測器研究”（2002-2005）；
11.中國科學院項目：“高溫大功率器件用SiC外延材料研究”（2001-2005）；
12.“973”項目:“高溫大功率微電子器件用SiC外延材料研究”(2000－2005)；
13.“863”項目:“可用於III族氮化物生長的大尺寸低位錯密度SiC襯底製備技術”(2001－2004)；
14.自然科學基金專題：“高溫微電子器件和電路”(1997－2001)；
15.國家“九五”重點科技攻關計畫：“高溫功率器件用MBE碳化矽材料”(1996－2000)；
代表論文
1．Sun Guo-Sheng, Liu Xing-Fang, Wu Hai-Lei, Yan Guo-Guo, Dong Lin, Zheng Liu, Zhao Wan-Shun, Wang Lei, Zeng Yi-Ping), Li Xi-Guang, and Wang Zhan-Guo, “Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement”
2．Guosheng Sun, Xing-Fang Liu, Lei Wang, Wan-Shun Zhao, Ting Yang, Hai-Lei Wu, Guo-Guo Yan, Yong-Mei Zhao, Jin Ning, Yi-Ping Zeng, Jin-Min Li, Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates, Chinese Physics B, Vol
3．Sun, Guosheng; Zhao, Yongmei; Wang, Liang; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Ji, Gang; Zeng, Yiping, “In-situ boron and aluminum doping and their memory effects in 4H-SiC homoepitaxial layers grown by hot-wall LPCVD”, Materials Science Forum, Vol
4．Guosheng Sun, Jin Ning, Xingfang Liu, Yongmei Zhao, Jiaye Li, Lei Wang, Wanshun Zhao, Liang Wang, Heavily Doped Polycrystalline 3C-SiC Growth on SiO2/Si (100) Substrates for Resonator Applications, Mater. Sci
5．Guosheng Sun, Jin Ning, Quancheng Gong, Xin Gao, Lei Wang, Xingfang Liu, Yiping Zeng, and Jinmin Li, “Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition,” Materials Science Forum, Vols
6．G. S. Sun, X. F. Liu, Q. C. Gong, L. Wang, W. S. Zhao, J. Y. Li, Y. P. Zeng, and J. M. Li, “Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001) Si faces,” Materials Science in Semiconductor Processing, Vol
7．Guosheng Sun, Xingfang Liu, Jin Ning, Yongmei Zhao, Jiaye Li, Lei Wang, Wanshun Zhao, Muchang Luo, Yiping Zeng, and Jinmin Li, “Homoepitaxial Growth and Device Characterization of SiC on Off-Oriented Si-Face (0001) 4H-SiC
8．Guo-Sheng Sun, Xing-Fang Liu, Jin Ning, Yong-Mei Zhao, Jia-Ye Li, Lei Wang, Wan-Shun Zhao, Mu-Chang Luo, Ying-Ping Zeng, and Jin-Min Li, “Homoepitaxial Growth and Device Characteristics of SiC on Off-Oriented Si-Face (0001) 4H-SiC,” 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings
9．Sun Guosheng, Ning Jin, Gao Xin, Gong Quancheng, Wang Lei, Liu Xingfang, Zeng Yiping, and Li Jinmin, “Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs,” Journal of Synthetic Crystals
10．Sun Guosheng, Wang Lei, Gong Quancheng, Gao Xin, Liu Xingfang, Zeng Yiping, and Li Jinmin, “LPCVD growth of 3C-SiC on Si Mesas and SiO2/Si Substrates for MEMS Applications,”
11．Guosheng Sun, Jin Ning, Yongxing Zhang, Xin Gao, Lei Wang, Wanshun Zhao, Yiping Zeng, and Jinmin Li, “Homoepitaxial Growth and MOS Structures of 4H-SiC on off-Oriented n-Type (0001) Si-Faces,” Proceedings of 7th International Conference on Solid-State and Integrated Circuits Technology
12．Sun Guosheng, Zhang Yongxing, Gao Xin, Wang Junxi, Wang Lei, Zhao Wanshun, Wang Xiaoliang, Zeng Yi-ping, Li Jinmin, Preparation of 2 Inch 3C-SiC/Si (111) as the Substrates Suited for III-Nitrides, Chinese Journal of Semiconductors
13．Sun Guosheng, Zhang Yongxing, Gao Xin, Wang Lei, Zhao Wanshun, Zeng Yiping, Li Jinmin, “Electrical Properties and Electroluminescence of 4H-SiC p-n Junction Diodes,”
14．Guosheng Sun, Xin Gao, Lei Wang, Wanshun Zhao, Yiping Zeng, And Jinmin Li, “Growth and Characterization of 4H-SiC by Horizontal Hot Wall CVD,” 13th International Conference on Semiconducting & Insulating Materials
15．Sun Guosheng, Gao Xin, Zhang Yongxing, Wang Lei, Zhao Wanshun, Zeng Yiping, Li Jinmin, “Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition,” Chinese Journal of Semiconductors, Vol
16．SUN Guosheng，GAO Xin，WANG Lei，ZHAO Wanshun，ZENG Yiping, LI Jinmin，”Progress in 4H-SiC Homoepitaxial Growth by Hot-Wall LPCVD,” The Chinese Journal of Nonferrous Metals, Vol
17．Guosheng Sun, Jin Ning, Yongxing Zhang, et al., “Homoepitaxial Growth and MOS Structures of 4H-SiC on off-Oriented n-Type (0001) Si-Faces,”
18．Sun Guosheng, Gao Xin, Wang Lei, et al., “Growth and Characterization of 4H-SiC by Horizontal Hot-Wall CVD,” Proceedings of SIMC-XIII-2004 IEEE Conference
19．Sun Guo-sheng, Sun Yan-ling, Wang Lei, Zhao Wan-shun, Luo Mu-chang, Zhang Yong-xing, Zeng Yi-ping, Li Jin-min, Lin Lan-ying, “Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si (100)
20．SUN Guosheng, LUO Muchang, WANG Lei, ZHAO Wanshun, SUN Yanling, ZENG Yiping LI Jinmin, LIN Lanying, “Raman Investigations of 3C-SiC Films Grown on Si (100) and Sapphire (0001) by LPCVD,” Chinese Journal of Luminescence
21．G.S. Sun, M.C. Luo, L. Wang, S.R. Zhu, J.M. Li, Y.P. Zeng, and L.Y. Lin, “In Situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD,” Mat
22．Sun Guosheng, Wang Lei, Luo Muchang, Zhao Wanshun, Sun Dianzhao, Zeng Yiping, Li Jinmin and Lin Lanying, “Improved Epitaxy of 3C-SiC Layers on Si(100) by new CVD/LPCVD System”
23．G.S. Sun, J.M. Li, M.C. Luo, S.R. Zhu, L. Wang, F.F. Zhang, L.Y. Lin, “Epitaxial Growth of SiC on Complex Substrates”
