教學工作
主要承擔《固體物理》（春季），《普通物理》（秋季）的本科生教學工作。
研究領域
主要從事半導體光電子學及器件的理論研究和設計。迄今為止，已在J.Appl.Phys 和J.Opt.Soc .Am.B等SCI源期刊上發表論文40餘篇。近期研究興趣：
1）寬頻隙半導體材料中光電性質的理論研究。
2) III族氮化物半導體基光電子器件的理論模擬和設計。
3) 低維半導體結構的量子調控。
4）高效太陽能電池材料的理論模擬。
國家級項目
主持國家自然科學基金項目“GaN基量子結構的非線性光學性質”[批准號：60906044，22萬，2010.1—2012.12]。
近期代表性文章
[1] Electric field effects on optical properties in zinc-blende InGaN/GaN quantum dot
Congxin Xia, Zaiping Zeng, Shuyi Wei
Journal of Luminscence, 131(2011)623.
[2]Effects of laser field and electric field on impurity states in zinc-blende GaN/AlGaN quantum well
Congxin Xia, Yanping Zhu, Shuyi Wei
Physics Letters A 375 (2011) 2652
[3]Nonlinear Franz-Keldysh effect: two photon absorption in a semiconducting quantum well
Congxin Xia, H. N. Spector
Journal of the Optical Society of America B 27 (2010) 1571.
[4]Electron and impurity states in GaN/AlGaN coupled quantum dots: Effects of electric field and hydrostatic pressure
Congxin Xia, Zaiping Zeng, Shuyi Wei
Journal of Applied Physics 108 (2010) 054307.
[5]Shallow-donor impurity in zinc-blende InGaN/GaN asymmetric coupled quantum dots: effect of electric field
Congxin Xia, Zaiping Zeng, Shuyi Wei
Journal of Applied Physics 107 (2010) 054305.
[6]Effects of applied electric field and hydrostatic pressure on donor impurity states in cylindrical GaN/AlN quantum dot
Congxin Xia, Zaiping Zeng, Shuyi Wei
Journal of Applied Physics 107(2010)014305
[7] Nonlinear Franz-Keldysh effect: two photon absorption in semiconducting quantum wires and quantum boxes
Congxin Xia, H. N.Spector
Journal of Applied Physics 106 (2009)124302/1-6.
(selected for the Vo1.21,No.1 of Virtual Journal of Nanoscale Science & Technology)
[8] Franz-Keldy effect in the interband optical absorption of semiconducting nanostructures
Congxin Xia, H. N.Spector
Journal of Applied Physics 105 (2009) 084313.
[9] Barrier width dependence of the donor binding energy of hydrogenic impurity in wurtzite InGaN/GaN quantum dot
Congxin Xia, Zaiping Zeng, Shuyi Wei
Journal of Applied Physics 106 (2009) 094301.
[10]Electric field effect on the donor impurity states in zinc-blende symmetric InGaN/GaN coupled quantum dots
Congxin Xia, Zaiping Zeng, Shuyi Wei
Physics Letters A 374 (2009) 97.
