研究方向
1. 加速器電鏡在線上及材料科學套用。 2. DLC（類金剛石）、CN（氮化碳）、納米晶複合材料。 3. 自旋電子學及鐵。 4. Free-standing GaN、寬禁帶半導體
人物簡介
1981-1985，武漢大學物理系,獲學士學位。
1985-1988， 武漢大學物理系，獲碩士學位。
1988-1995， 三峽大學物理系，講師。
1996-1999， 武漢大學物理系，獲博士學位。
1999-2002， 東國大學（韓國）量子功能半導體研究中心，博士後fellow。
從事GaN、MOS、納米pyramid、磁性半導體的研究工作。
2001-2004， 東國大學（韓國）研究教授，從事鐵電存貯器、自旋電子學研究。
2004年－今， 武漢大學教授，從事寬禁帶半導體、自旋電子學、離子束材料合成與改性。
科研項目
1. 教育部留學回國啟動基金：寬禁帶半導體與自旋電子學
2. 國家自然科學基金：多比特(multibit)存儲器材料與器件
3. 國家計委產業化項目：氮化碳超硬塗層技術的中試及產業化
4、國家自然科學基金重點項目：加速器-電鏡在線上及其在材料科學中的套用
科研成果
在Appl. Phys. Lett.和Phys. Rev. B等國際知名期刊上發表論文 50 余篇。他引近300次。首次採用光電化學方法製備GaN基MOS器件；率先用光化學方法形成GaN納米金錐；首次在磁性半導體材料中觀測到鐵電存儲特性。申請發明專利13項。
教學工作
大學物理（本科課程）；現代材料物理（研究生課程）
學術兼職
湖北省核學會副理事長
湖北省太陽能研究會副理事長
湖北省刀具協會副理事長
Chinese Phys. Lett.特約評審。
主要論文
1. D. J. Fu, Y. H.KWON, T. W.kang, and K. S. Chung, GaN metal-oxide-semiconductor structures using Ga-oxide dielectrics formed by photoelectrochemical oxidation, Appl. Phys. Lett. 80 (2002) 446.
2. D. J. Fu, T. W. Kang, Sh. U. Yudalshev, J. S. Yun, K. S. Chung, Effect of photoelectrochemical oxygenation on properties of GaN epilayers grown by MBE, Appl. Phys. Lett. 78 (2001) 1309.
3. D. J. Fu and T. W. Kang, Electrical properties of GaN-based metal-oxide-semiconductor structures fabricated by photoelectrochemical oxidation, Jpn. J. Appl. Phys. 41 (2002) L1437.
4. D. J. Fu, G. P. Panin, T. W. Kang, GaN pyramids prepared by photo-assisted chemical etching, J. Kr. Phys. Soc. 42 (2003) 611.
5. D. J. Fu, Sh. U. Yudalshev, N. H. Kim, S. H. Park, T. W. Kang, K. S. Chung, A study of photoelectrochemical oxidation of GaN epilayers by extrinsic photoconductivity, Jpn. J. Appl. Phys. 40 (2001) L10.
6. D. J. Fu, Y. S. Park, T. W. Kang, Formation of hexagonal GaN pyramids by photo-assisted electroless chemical etching, Jpn. J. Appl. Phys. (2005).
8. Y. S. Park, C. M. Park, D. J. Fu, T. W. Kang, J. E. Oh, Photoluminescence studies of GaN nanorods on Si (111) substrates grown by molecular-beam epitaxy, Appl. Phys. Lett. 85 (2004) 5718.
9. Y. Shon, Y. S. Park, K. J. Chung, D. J. Fu et al, Optical and magnetic properties of Mn-implanted GaAs, J. Appl. Phys. 96 (2004) (proof).
10. Y. Shon, Y. H. Kwon, Y. S. Park, Y. Sh. Yuldashev, S. J. Lee, C. S. Park, K. J. Chung, S. J. Hoon, H. J. Kim, W. C. Lee, D. J. Fu, T. W. Kang, X. J. Fan, Ferromagnetic behavior of p-type GaN epilayer implanted with Fe ions, J. Appl. Phys. 95 (2004) 761.
11. Y. Shon, Y. H. Kwon, Sh. U Yuldashev, Y. S. Park, D. J. Fu, D. Y. Kim, H. S. Kim, T. W. Kang, J. Appl. Phys. (2003) 1546.
12. M. K. Li, C. B. Li, C. S. Liu, X. J. Fan, D. J. Fu, Y. Shon, T. W. Kang, Optical and magnetic measurements of Mn+-implanted AlN, J. Appl. Phys. 95 (2004) 755.
14. Y. H. Kwon, Y. Shon, W. C. Lee, D. J. Fu, H. C. Jeon, T. W. Kang, T. W. Kim, X. J. Fan, Optical and magnetic properties of Mn-implanted neutron-transmutation-doped GaAs bulks, J. Appl. Phys. 96 (2004).
15. Y. Shon, Y. H. Kwon, Sh. U. Yuldashev, J. H. Leem, C. S. Park, D. J. Fu, H. J. Kim, T. W. Kang, X. J. Fan, Optical and magnetic measurements of p-type GaN epilayers implanted with Mn ions, Appl. Phys. Lett. 81 (2002) 1845.
16. Y. Shon, Y. H. Kwon, Y. S. Park, Y. Sh. Yuldashev, S. J. Lee, C. S. Park, K. J. Chung, S. J. Hoon, H. J. Kim, W. C. Lee, D. J. Fu, Ferromagnetic behavior of p-type GaN epilayer implanted with Fe ions, J. Appl. Phys. 95 (2004) 761.
17. Y. Shon, Y. H. Kwon, Sh. U Yuldashev, Y. S. Park, D. J. Fu, D.Y. Kim, H. S. Kim, T. W. Kang, J. Appl. Phys. (2003) 1546.
18. Y. S. Park, J. H. Na, H. S. Lee, H. J. Kim, C. M. Park, S. W. Choi, D. J. Fu, Optical properties related to a two-dimensional electron gas at an AlGaN/GaN heterostructure, J. Kr. Phys. Soc, 43 (2003) 743.
19. Y. Shon, Y. H. Kwon, T. W. Kang, X. Fan, D. J. Fu, Optical characteristics of Mn-ion-implanted GaN epilayers, J. Cryst. Growth 245 (2002) 193.
20. Y. Shon, Sh. U. Yuldashev, X. J. Fan, D. J. Fu, Photo-enhanced magnetoresistance effect in GaAs with nanoscale magnetic clusters, Jpn. J. Appl. Phys. 40 (2001) 3082.
21. Sh. U. Yuldashev, Y. Shon, Y. H. Kwon, D. J. Fu, D. Y. Kim, H. J. Kim, T. W. Kang, X. Fan, J. Appl. Phys. 90 (2001) 3004.
22. Y. Shon, Y. H. Kwon, D. Y. Kim, X. Fan, D. Fu, T. W. Kang, Magnetic Characteristic of Mn ion implanted GaN epilayer, Jpn. J. Appl. Phys. 40 (2001) 5304.
23. Y. Shon, W. C. Lee, Y. S. Park, Y. H. Kwon, Seung Joo Lee, K. J. Chung, H. S. Kim, D. Y. Kim, D. J. Fu, Mn-implanted dilute magnetic semiconductor InP:Mn, Appl. Phys. Lett. 84 (2004) 2310.
24. Y. Shi, L. Lin, C. Z. Jiang, D. J. Fu and X. J. Fan, Structural and magnetic studies of Mn+ implanted GaN films, J. Wuhan Univ. (Nat. Sci. Ed.) 50 (2004) 555.
25. D. J. Fu, J. C. Lee, S. W. Choi, C. S. Park, G. P. Panin, T. W. Kang, X. J. Fan, Ferroelectricity in Mn-implanted CdTe, Appl. Phys. Lett. 83 (2003) 2214.
26. D. J. Fu, J. C. Lee, S. W. Choi, S. J. Lee, T. W. Kang, M. S. Jang, H. I. Lee and Y. D. Woo, Study of ferroelectricity and current–voltage characteristics of CdZnTe, Appl. Phys. Lett. 81 (2002) 5207.
27. Y. H. Kwon, C. J. Park, W. C. Lee, D. J. Fu, Memory effects related to deep levels in metal–oxide–semiconductor structure with nanocrystalline Si, Appl. Phys. Lett, 80 (2002) 2502.
主要專利
1. D. J. Fu, S. W. Choi, J. C. Lee, T. W. Kang, Nonvolatile memory devices using ferroelectric semiconductors, Application # 10-2003-007356（韓國專利申請號）.
2. D. J. Fu, S. W. Choi, J. C. Lee, T. W. Kang, 1T1C nonvolatile memory devices using ferroelectric semiconductors, Application # 10-2003-007357.
3. D. J. Fu, J. C. Lee, S. W. Choi, T. W. Kang, Nonvolatile memory using ferroelectric semiconductor channels, Application # 10-2003-007358.
4. D. J. Fu, S. W. Choi, T. W. Kang,Chemicallyformed GaN pyramids as template for III-nitride growth, Application # 10-2003-0073560.
5. D. J. Fu et al, Memory devices using current-voltage hysteresis of ferroelectricsemiconductors, Application # 10-2003-007355.
