1998年獲大連輕工業學院無機非金屬材料專業碩士學位, 2005年獲中國科學院上海矽酸鹽研究所材料科學與工程專業博士學位。2005年6月通過大連理工大學特殊評審為副教授, 2008年6月通過大連理工大學特殊評審為博士生導師。博士期間（2002－2005）起一直從事新一代寬頻隙半導體－氧化鋅光電材料與器件的研究工作。參加過中科院百人計畫基金、國家自然科學基金、上海市科委光科技行動計畫等多項科研課題, 已在國內外學術刊物和會議上發表論文近50篇。在ZnO材料與光電器件方面
大連理工大學微電子邊繼明老師近年發表的代表論文：
1) J. M. bian(邊繼明), X. M. Li, C. Y. zhang, et al. “Synthesis and characterization of two-layer-structured ZnO p-n homojunctions by ultrasonic spray pyrolysis”, Applied Physics Letters, 84(19), p.3783-3785 (2004).
2) J. M. Bian(邊繼明), X. M. Li, C. Y. Zhang, et al. “P-type ZnO films by monodoping of nitrogen and ZnO based p-n homojunctions.” Applied Physics Letters, 85(18), p. 4070-4072 (2004).
3) J. M. Bian(邊繼明), X. M. Li, X. D. Gao, et al. “Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis”, Applied Physics Letters, 84(4), p.541-543 (2004).
4) Ji Ming Bian(邊繼明), Xiao Min Li, Li Dong Chen, et al.“Properties of undoped n-type ZnO film and N-In codoped p-type ZnO film deposited by ultrasonic spray pyrolysis”, Chemical Physics Letters, 393(3), p. 256-259(2004).
5) Jiming Bian(邊繼明), Weifeng Liu, Hongwei Liang, et al., “ Room temperature electroluminescence from the n-ZnMgO/ZnO/p-ZnMgO heterojunction device grown by ultrasonic spray pyrolysis”, Chemical Physics Letters, 430, p. 183-187(2006).
6) Jiming Bian(邊繼明), Yingmin Luo, Jingchang Sun, et al., “Synthesis and temperature dependent photoluminescence of Zn1-xMgxO films grown by ultrasonic spray pyrolysis”, Journal of Materials Science, 42 (20): 8461-8464 (2007).
7) Ji Ming Bian(邊繼明), Xiao Min Li, Tong Lai Chen, et al., “Preparation of high quality MgO thin films by ultrasonic spray pyrolysis”, Applied Surface Science, 228(1-4), p. 297-301(2004).
8) Ji Ming Bian(邊繼明),Xiao Min Li, et al., “Growth and Characterization of High Quality MgO Thin Films by Ultrasonic Spray Pyrolysis”, Key Engineer Material, 280-283, p. 1171-1175(2005).
9) Jiming Bian(邊繼明), Weifeng Liu, et al., “Synthesis and defect-related emission of ZnO based light emitting device with homo- and heterostructure”, Journal of Materials Processing Technology, 184, p.451-454, (2007).
10)邊繼明, 李效民, 高相東, “襯底溫度對ZnO薄膜生長過程及微觀結構的影響研究”, 無機材料學報, 19(3), p. 641－646(2004).
11)邊繼明, 李效民, 張燦雲, 趙俊亮, “ZnO基薄膜載流子傳輸特性研究”, 中國有色金屬學報, 14(s3), p. 478－481( 2004).
12)邊繼明, 李效民, 趙俊亮, 於偉東, “PLD法生長高質量ZnO薄膜及其光電導特性研究”, 無機材料學報, 21(3), p. 701－706(2006).
13)邊繼明, 劉維峰, 胡禮中, 梁紅偉, “超聲噴霧熱解法生長氧化鋅同質p-n結及其電致發光性能研究”, 無機材料學報, 22(1), p. 173－175 (2007).
14) 邊繼明, 劉維峰, 梁紅偉, 孫景昌, 駱英民, 胡禮中, 杜國同, “超聲噴霧熱解法生長氧化鋅基發光原型器件研究”, 光電子.雷射, 17, p.79－80, 2006.
15) 邊繼明, 李效民, 張燦雲, 趙俊亮, 於偉東, 高向東, “氮－銦共摻雜ZnO薄膜光學性能研究”, 液晶與顯示, 20(3), 200－204, 2005.
16) 邊繼明, 杜國同, 胡禮中, 李效民, 趙俊亮, “脈衝雷射沉積（PLD）法生長高質量ZnO薄膜及其發光性能”, 發光學報, 27(6),958-962,2006.
17) Qingwei Li, Jiming Bian(邊繼明), Jingchang Sun, et al., “Controllable growth of well-aligned ZnO nanorod arrays by low-temperature wet chemical bath deposition method ”, Applied Surface Science, 256, 1698-1702(2010). (通訊聯繫人)
18) G. T. Du, W. F. Liu, J. M. Bian(邊繼明), et al., “Room temperature defect related electroluminescence from ZnO homojunctions grown by ultrasonic spray pyrolysis ”, Applied Physics Letters, 89, p.052113 (2006).
19) Yingmin Luo, Jiming Bian(邊繼明), Jingchang Sun, et al., “Deposition and tunable photoluminescence of Zn1-x(Mg,Cd)xO film system ”, Journal of Materials Processing Technology, 189, 473-476 , (2007). (通迅聯繫人)
20) W. F. Liu, J. M. Bian(邊繼明), L. Z. Hu, et al., “Electroluminescence from a ZnO homojunction device grown by pulsed laser deposition ”, Solid State Communications, 142, 655-658, (2007). (通迅聯繫人)
21) Tianpeng Yang, Jiming Bian(邊繼明), Hongwei Liang, et al., “High quality p-type ZnO films grown by low pressure plasma-assisted MOCVD with N2O RF plasma doping source”, Journal of Materials Science, 204, 481-485 (2008). (通訊聯繫人)
22) T. P. Yang, H. C. Zhu, J. M. Bian(邊繼明), et al., “Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD”, Materials Research Bulletin, 43, 3614-3620(2008). (通訊聯繫人)
23) WANG Jing-Wei, BIAN Ji-Ming(邊繼明), et al., “Enhanced p-type ZnO films through nitrogen and argentum codoping grown by ultrasonic spray pyrolysis”, Chinese Physics Letters, 25(9), 3400-3402(2008). (通訊聯繫人)
24) 王經緯, 邊繼明, 孫景昌, 梁紅偉, 趙澗澤, 杜國同, “Ag摻雜p型ZnO薄膜及其光電性能研究”, 物理學報, 57(8), 5212-5216(2008). (通訊聯繫人)
25) Jingchang Sun, Jiming Bian(邊繼明), Hongwei Liang, et al., “Realization of controllable etching for ZnO film by NH4Cl aqueous solution and its influence on optical and electrical properties”, Applied Surface Science, 253, 5161-5165 (2007).
26) C. W. Zou, X. D. Yan, J. Han, R. Q. Chen, J. M. Bian(邊繼明), E. Haemmerle, W. Gao, “Preparation and enhanced photoluminescence property of ordered ZnO/TiO2 bottlebrush nanostructures”, Chemical Physics Letters, 476, 84-88 (2009).
27) C. W. Zou, J. M. Bian(邊繼明), “Comment on “Influence of growth mode on the structural, optical, and electrical properties of In-doped ZnO nanorods” Appl. Phys. Lett. 94, 041906, 2009”, Applied Physics Letters, 95, 126101 (2009).
28) J. C. Sun, J. Z. Zhao, H. W. Liang, J. M. Bian(邊繼明), et al., “Realization of ultraviolet electroluminescence from ZnO homojunction with n-ZnO/p-ZnO:As/GaAs structure”, Applied Physics Letters, 90, p.121128 (2007).
29) Jun-Liang Zhao, Xiao-Min Li , Ji-Ming Bian(邊繼明), et al., “Comparison of structural and photoluminescence properties of ZnO thin films grown by pulsed laser deposition and ultrasonic spray pyrolysis ”, Thin Solid Films, 515, 1763-1766, (2006).
30) J. Z. Zhao, H. W. Liang, J. C. Sun, J. M. Bian(邊繼明), et al., “Eelectroluminescence from n-ZnO/p-ZnO:Sb homojunction light emitting diode on sapphire substrate with metal-organic Precursors doped p-type ZnO layer grown by MOCVD technology”, Journal of Physics D: Applied Physics, 41 (19), 195110 (2008).
31) J. Z. Zhao, H. W. Liang, J. C. Sun, Q. J. Feng, J. M. Bian(邊繼明),et al., “p-Type Sb-Doped ZnO Thin Films Prepared by Metal organic Chemical Vapor Deposition Using Metallorganic Dopant”, Electrochem. Solid-State Lett. 11, 12 H323 (2008).
32) Zhao Z W, Hu L Z, Zhang H Q, Sun J C, Bian J M(邊繼明), et al., “Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates”, Chinese Physics Letters, 26(5), 057305(2009).
33) J. C. Sun, T. P. Yang, G. T. Du, H. W. Liang, J. M. Bian(邊繼明), “ Influence of annealing atmosphere on ZnO thin films grown by MOCVD” , Applied Surface Science, 253, 2066-2070, (2006).
34) Sun Jing-Cang, Liang Hong-Wei, Zhao Jian-Ze, Bian Ji-Ming(邊繼明), et al., “Realization of ultraviolet electroluminescence from ZnO homojunction fabricated on silicon substrate with p-type ZnO:N layer formed by radical N2O doping”, Chinese Physics Letters, 25(12), 4345-4347(2008).
35) J. C. Sun, H. W. Liang, J. Z. Zhao, J. M. Bian(邊繼明), et al., “Ultraviolet electroluminescence from n-ZnO:Ga/p-ZnO:N homojunction device on sapphire substrate with p-type ZnO:N layer formed by annealing in N2O plasma ambient”, Chemical Physics Letters, 460 (4-6), 548-551 (2008).
36) Jun Liang Zhao, Xiao Min Li, Ji Ming Bian(邊繼明), et al., “Structural, optical and electrical properties of ZnO films grown by pulsed laser deposition (PLD)”, Journal of Crystal Growth, 276, p.507-512, (2005).
37) Can Yun Zhang, Xiao Min Li, Ji Ming Bian(邊繼明), et al., “Structural and electrical properties of nitrogen and aluminum codoped p-type ZnO films by ultrasonic spray pyrolysis”, Solid State Communications, 132, p. 75-78 (2004).
38) Can Yun Zhang, Xiao Min Li, Ji Ming Bian(邊繼明), et al., “Nitrogen and aluminum codoped p-type ZnO films and ZnO p-n homojunctions”, Surface and Coating Technology, 198, P. 253-256 (2005).
39) Jun-Liang Zhao, Xiao-Min Li, Ji-Ming Bian(邊繼明), et al., “Growth, electrical and optical properties of N-doped p-type ZnO thin films grown by ultrasonic spray pyrolysis”, Journal of Crystal Growth, 280, P. 495-501 (2005).
40) Zhang X., Li X. M., Chen T. L., Ji-Ming Bian(邊繼明), et al., “Structural and optical properties of Zn1-xMgxO thin films deposited by ultrasonic spray pyrolysis”, Thin Solid Films, 492, p.248-252(2005).
41) 趙俊亮, 李效民, 邊繼明, 張燦雲, 於偉東, 高向東, “噴霧熱解法生長N摻雜ZnO薄膜機理分析”, 無機材料學報, 20, p. 959－964(2005).
近五年申請的代表專利：
1. 邊繼明, 李效民, 高相東, 於偉東
“一種p型氧化鋅薄膜的製備方法”。專利號：03151096 (已授權)
2. 邊繼明, 李效民, 高相東, 於偉東
“一種氧化鋅同質結p-n結的製備方法”。專利號：200310109139(已授權)
3. 梁紅偉, 杜國同, 趙澗澤, 孫景昌, 邊繼明, 胡禮中
“一種Sb摻雜製備p型ZnO薄膜方法” 專利號：200810010104(已授權)
4. 李效民, 邊繼明, 張燦雲, 趙俊亮
“摻氮空穴型氧化鋅薄膜材料的噴霧熱解製備方法”。申請號：200410025029.1
5. 李效民, 張燦雲, 邊繼明, 於偉東, 高相東
“一種氮鋁共摻雜空穴型ZnO薄膜材料的製備工藝”。申請號：200410089074.3.
6. 邊繼明, 杜國同, 胡禮中, 劉維峰, 王新盛, 梁紅偉
“一種氧化鋅材料發光二極體的製備方法”。申請號：200510200730.7
7. 梁紅偉, 孫景昌, 杜國同, 趙澗澤, 邊繼明, 胡禮中
“一種N摻雜的ZnO的受主激活方法” 申請號：200810010103.0
