人物經歷
1993.09-1997.07 南昌航空工業學院：本科。
1997.07-1999.07 成都新星電器股份公司：助理工程師。
1999.07-2000.11 東莞時力電子三廠：工程師。
2001.09-2004.07 貴州大學：研究生。
2004.09-2008.06 電子科技大學：博士。
2008.06-至今 電子科技大學：教師。
研究方向
1、寬禁帶半導體碳化矽功率半導體技術：
高壓大電流寬禁帶半導體碳化矽(SiC)功率器件理論、模型和新結構研究，包括：SiC IGBT、SiC VDMOS、SiC功率整流器以及功率模組等。
2、大功率射頻半導體器件技術：
超大功率Si基RF LDMOS器件和SiC基微波固態功率器件設計、模型與新結構研究。
8英吋Si RF LDMOS器件晶圓、SiC SBD器件晶圓、SiC VDMOS器件。
研究條件：
完整的器件與積體電路設計平台（Cadence，Silvaco，Senturus，Taurus Medici，Hspice，Sabe等）0.45mm微細加工平台。
主要貢獻
科研情況
主要從事寬禁帶半導體碳化矽功率器件以及矽基射頻LDMOS器件理論、模型和新結構研究。主持了國家科技重大專項子課題、國家自然科學基金面上項目、國防重點實驗室基金、中央高校基本科研業務費等基礎研究項目；參與了國家重大基礎研究973項目子課題、國家自然科學基金重點項目等的研究。在Microelectronic Engineering、Semiconductor Science and Technology、Electronics letter等SCI和EI期刊和會議發表相關論文20餘篇，授權中國發明專利2項。被邀為IEEE Tran. Electron Devices的審稿人。
論文
[1] Xiaochuan Deng, He Sun, Chengyuan Rao, Bo Zhang, High-power SiC MESFETs using dual p-buffer layer for S-band power amplifiers, Chinese Physics B, 22(1):017302, 2013。
[2] Xiaochuan Deng, Chengyuan Rao, Jin Wei, Huaping Jiang, Miaomiao Chen, Xiangdong Wang and Bo Zhang, High voltage SiC JBS diodes with multiple zone junction termination extension using single etching step. Materials Science Forum, 778-780:808-811, 2014。
[3] Xiaochuan Deng, Liang Li, Bo Zhang, Jianghui Mo, Yong Wang, Yi Wang and Zhaoji Li, High-power density SiC MESFETs with multi-recess gate. Electronics Letter, 47(8): 517-518, 2011。
[4] Xiaochuan Deng, Bo Zhang, Yourun Zhang, Yi Wang, and Zhaoji Li, Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer. Chinese Physics B, 20(1): 017304, 2011
[5] XiangDong Wang, * Xiaochuan Deng, Yong-Wei Wang, Yong Wang, Yi Wen and Bo Zhang。Experimental and numerical analysis of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring. Chinese Physics B. 23(5):057203, 2014。
[6] Xiaochuan Deng, Bo Zhang, Zhaoji Li, Two-dimensional analysis of the gate–source distance scaling effects in 4H-SiC MESFETs. Semiconductor Science and Technology, 24(1):015011, 2009。
[7] Xiaochuan Deng, Zhen Feng, Bo Zhang, Zhaoji Li, Liang Li and Hongshu Pan. Experimental and numerical analysis of the multi-recessed gate structure for microwave Silicon Carbide power MESFETs. Chinese Physics B, 18(7): 3018-3023, 2009。
[8] Xiaochuan Deng, Bo Zhang, Zhaoji Li, Zhuangliang Chen. Two-dimensional analysis of the surface state effects in 4H-SiC MESFETs. Microelectronic Engineering, 85(2):295-299, 2008。
[9] Xiaochuan Deng, Bo Zhang, Zhaoji Li. Electro-thermal analytical model and simulation of the self-heating effects in multi-finger 4H-SiC power MESFETs. Semiconductor Science and Technology, 22(12):1339-1343, 2007。
[10] Xiaochuan Deng, Bo Zhang, Zhaoji Li, Zhuangliang Chen. Numerical analysis on the 4H-SiC MESFETs with a source field plate. Semiconductor Science and Technology, 22(7):701-704, 2007。
[11] Xiaochuan Deng, Bo Zhang, Zhaoji Li, and Yourun Zhang. Improved dual-channel 4H-SiC MESFETs with high doped n-type surface layer and step-gate structure. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 30(7): 074001-1-074001-5, 2009。
