人物經歷
教育背景
2006.09－2011.08 香港科技大學，電子與計算機工程系，博士
2002.09－2006.08 清華大學，數理基礎科學班，學士
工作履歷
2014.09 - present 電子科技大學，微電子與固體電子學院，副教授
2011.12－2014.08 電子科技大學，微電子與固體電子學院，講師
2011.09 - 2011.12 香港科技大學，電子與計算機工程系，博士後
研究方向
研究方向為片上電感和變壓器、磁感應無線功率傳輸。主要包含以下幾方面的內容：新型背面矽嵌入式變壓器結構的設計和實驗實現，多孔矽和磁芯材料在背面矽嵌入式電感和變壓器中的套用，片上變壓器在數字隔離器中的套用，使用背面矽嵌入式無線功率接收線圈的無線功率接收晶片，用於飛行器的無線功率傳輸，可穿戴生物感測器的無線供能。
研究領域
1. 隔離變壓器的晶片集成
套用：600V以上功率器件的柵極驅動、數據匯流排隔離
主要解決問題：集成信號隔離變壓器的EMI、Noise、CMTI，集成功率隔離變壓器的低頻效率和隔離能力
2. 功率電感的晶片集成和封裝集成
套用：移動可穿戴電源管理、處理器電源管理
主要解決問題：給定晶片面積下的電感效率
3. 基於先進封裝技術的晶片配電設計
主要解決問題：低封裝成本和複雜度、低配電網路阻抗
4. 基於矽工藝的微型揚聲器
主要解決問題：尺寸、聲壓級、高頻特性
5. 磁感應無線功率傳輸中的線圈設計
主要解決問題：線圈相互位置擾動對系統的影響、線圈效率
學術兼職
IEEE Transactions on Power Electronics, IEEE Electron Device Letters, IEEE Energy Conversion Congress &Exposition審稿人 .
主要論文
[1] R. Wu, N. Liao, X. Fang, and J.K.O. Sin, “A novel double-side silicon-embedded transformer for 10-MHz, 1-kV-isolation, compact power transfer applications,” IEEE Transactions on Electron Devices, vol. 63, no. 11, pp. 4542-4545, November 2016.
[2] X. Fang, R. Wu, and J.K.O. Sin, "Analytical modeling of ac resistance in thick coil integrated spiral inductors," IEEE Transactions on Electron Devices,vol. 63, no. 2, pp. 760-766, February 2016.
[3] R. Wu, N. Liao, X. Fang, and J.K.O. Sin, “A silicon-embedded transformer for high-efficiency, high-isolation, low-frequency on-chip power transfer,” IEEE Transactions on Electron Devices, vol. 62, no. 1, pp. 220-223, January 2015.
[4] X.Fang, R. Wu, L. Peng, and J.K.O. Sin, “A novel integrated power inductor with vertical laminated core for improved L/R ratios,” IEEE Electron Device Letters, vol. 35, no. 12, pp. 1287-1289, December 2014.
[5] R. Wu, W. Li, H. Luo, J.K.O. Sin,and C.P. Yue, “Design and characterization of wireless power links for brain-machine interface applications,” IEEE Transactions on Power Electronics, vol. 29, no. 10, pp. 5462-5471, October 2014.
[6] L. Peng, R. Wu, X. Fang, Y. Toyoda, M. Akahane, M. Yamaji, H. Sumida, and J.K.O. Sin, “Optimization of monolithic 3D TSV transformers for high-voltage digital isolators,” ECS Journal of Solid State Science and Technology,vol. 3, no. 10, pp. Q207-Q211, August 2014.
[7] L. Peng, R. Wu, X. Fang, Y. Toyoda, M. Akahane, M. Yamaji, H. Sumida, and J.K.O. Sin, “A simple low cost monolithic transformer for high-voltage gate driver applications,” IEEE Electron Device Letters, vol. 35, no. 1, pp. 108-110, January 2014.
[8] S. Raju, R. Wu, M. Chan, and C.P. Yue, “Modeling of mutual coupling between planar inductors in wireless power applications,” IEEE Transactions on Power Electronics, vol. 29, no. 1, pp. 481-490, January 2014. (ESI工程學前1%高被引論文）
[9] L. Peng, R. Wu, X. Fang, Y. Toyoda, M. Akahane, M. Yamaji, H. Sumida, and J.K.O. Sin, “A fully integrated 3D TSV transformer for high-voltage signal transfer applications,” ECS Solid State Letters, vol. 2, no. 5, pp. Q29-Q31, February 2013.
[10] X.Fang, R. Wu, L. Peng, and J.K.O. Sin, “A novel silicon-embedded toroidal power inductor with magnetic core,” IEEE Electron Device Letters, vol. 34, no. 3, pp. 292-294, February 2013.
[11] R. Wu, J.K.O. Sin, and C.P. Yue, “High-Q backside silicon–embedded inductor for power applications in μH and MHz range,” IEEE Transactions on Electron Devices, vol. 60, no. 1, pp. 339-345, January 2013.
[12] R. Wu, S. Raju, M. Chan, J.K.O. Sin and C.P. Yue, “Silicon-embedded coil for high-efficiency wireless power transfer to implantable biomedical ICs,” IEEE Electron Device Letters, vol. 34, no. 1, pp. 9-11, January 2013.
[13] R. Wuand J.K.O. Sin, “High efficiency silicon-embedded coreless coupled inductors for power supply on chip applications,” IEEE Transactions on Power Electronics, vol. 27, no. 11, pp. 4781-4787, November 2012.
[14] R. Wu, J.K.O. Sin, and S.Y. (R.) Hui, “Novel silicon-embedded coreless transformer for on-chip isolated signal transfer,” IEEE Magnetics Letters, vol. 2, pp. 6500103, April 2011.
[15] R. Wuand J.K.O. Sin, “A novel silicon-embedded coreless inductor for high frequency power management applications,” IEEE Electron Device Letters, vol. 32, no.1, pp. 60-62, January 2011.
Conference Publications:
[1] R. Wu, N. Liao, X. Fang, and J.K.O. Sin, "A novel silicon-embedded transformer for system-in-package power isolation," 5th International Workshop on Power Supply on Chip(PwrSoC), Madrid, Spain, October 2016.
[2] R. Wu, J. Chen, N. Liao, and X. Fang, "On-chip transformers with shielding structures for high dV/dt immunity isolated gate drive," 8th IEEE Energy Conversion Congress & Exposition(ECCE),Milwaukee, USA, September 2016.
[3] S. Chen, Y. Li, and R. Wu, "Inductance to dc resistance ratio optimization of on-chip closed-core spiral power inductors," 12th IEEE International Conference on Electron Devices and Solid State Circuits(EDSSC), Hong Kong, China, August 2016.
[4] R. Wu, N. Liao, X. Fang, and J.K.O. Sin, "A novel 3D transformer for ultra-compact signal isolation," 27th IEEE International Symposium on Power Semiconductor Devices & IC’s(ISPSD), Hong Kong, China, May 2015, pp. 297-300.
[5] J. Zhou, R. Wu, J. Billoué and G. Gartier, “Backside silicon-embedded inductor using porous silicon layer for substrate effect suppression,” 10th IEEE International Conference on Electron Devices and Solid State Circuits(EDSSC), Chengdu, China, June 2014.
[6] Y. Luo and R. Wu, “Specific absorption rate study for wireless power links in brain-machine interface applications,” 10th IEEE International Conference on Electron Devices and Solid State Circuits(EDSSC), Chengdu, China, June 2014.
[7] R. Wu, W. Li, Y. Ren, H. Luo, and G. Zhang, “Backside silicon-embedded inductor using magnetic layer for shielding and inductance enhancement,” 9th IEEE International Conference on Electron Devices and Solid State Circuits(EDSSC), Hong Kong, June 2013.
[8] L. Peng, R. Wu, X. Fang, Y. Toyoda, M. Akahane, M. Yamaji, H. Sumida, and J.K.O. Sin, “A novel 3D TSV transformer technology for digital isolator gate driver applications,” 25th IEEE International Symposium on Power Semiconductor Devices & IC’s(ISPSD), Kanazawa, Japan, May 2013, pp. 69-72.
[9] S. Raju, R. Wu, M. Chan, and C.P. Yue, “Modeling of mutual inductance for planar inductors used in inductive link applications,” 8th IEEE International Conference on Electron Devices and Solid State Circuits(EDSSC), Bangkok, Thailand, December 2012.
[10] R. Wu, X. Fang, L. Peng, and J.K.O. Sin, “Backside embedded inductors for PowerSoC applications,” 3rd International Workshop on Power-Supply-on-Chip(PwrSoC), San Francisco, USA, November 2012.
[11] X. Fang, R. Wu, L. Peng, and J.K.O. Sin, “A new embedded inductor for ZVS dc-dc converter applications,” 24th IEEE International Symposium on Power Semiconductor Devices & IC’s(ISPSD), Bruges, Belgium, June 2012, pp. 53-56.
[12] R. Wu, S. Raju, M. Chan, J.K.O. Sin and C.P. Yue, “Wireless power link design using silicon-embedded inductors for brain-machine interface,” 2012 International Symposium on VLSI Design, Automation and Test(VLSI-DAT), Hsinchu, Taiwan, April 2012, pp.1-4.
[13] R. Wuand J.K.O. Sin, “Novel silicon-embedded coreless coupled inductors for high efficiency on-chip dc-dc conversion”, 3rd IEEE Energy Conversion Congress & Exposition(ECCE), Phoenix, USA, September 2011, pp. 1827-1831.
[14] R. Wu, J.K.O. Sin, and S.Y. (R.) Hui, “A novel silicon-embedded coreless transformer for isolated dc-dc converter application”, 23rd IEEE International Symposium on Power Semiconductor Devices & IC’s(ISPSD), San Diego, USA, May 2011, pp. 352-355.
[15] R. Wu, Y. Su, J.K.O. Sin, and S.Y. (R.) Hui, “Characterization of monolithic coreless transformers for power supply-on-chip applications”, 1st International Workshop on Power-Supply-on-Chip(PwrSoC), Cork, Ireland, September 2008.
[16] Y. Onishi, H. Wang, H.P.E. Xu, W.T. Ng, R. Wuand J.K.O. Sin, “SJ-FINFET: a new low voltage lateral superjunction MOSFET”, 20th IEEE International Symposium on Power Semiconductor Devices & IC’s(ISPSD), Orlando, USA, May 2008, pp.111-114.
[17] J. Zhang, R. Wu, M. Gao, J. Huang, Y. Wang, Z. Yu, Y. Ashizawa, and H. Oka, “Atomistic simulation of plasma enhanced chemical vapor deposited SiCOH dielectrics,” 8th International Conference on Solid-State and Integrated Circuit Technology(ICSICT), Shanghai, China, October 2006, pp. 1447-1449.
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