基本信息
張建軍 男 南開大學信息科學院研究員; 副院長
個人簡介
1992年7月於南開大學電子科學系本科畢業,1997年7月於南開大學光電子薄膜器件與技術研究所碩士畢業,2003年東京工業大學綜合理工學研究科物理情報系統創造專攻博士畢業。2003-2004東京工業大學大學院理工學研究科附屬像情報工學研究施設博士後。2004年晉升為副教授,2005年晉升為教授。目前主要從事薄膜光電子材料、器件與技術和新型光伏材料與光伏器件方面的研究工作。主要研究方向為柔性矽薄膜太陽電池、矽鍺薄膜材料與電池、有機無機複合太陽電池。
科研項目
目前主持科技部863項目一項,天津市重點基金項目一項,十二五973項目子課題一項(2011.1至2015.8)
社會兼職
IEEE member、中國真空學會高級會員、中國太陽能學會會員
講授課程
薄膜材料測試與分析技術(碩士), 光伏材料與器件概論(碩士), 新型光伏材料與器件(博士)
論文專著
1. Ziyang Hu, Jianjun Zhang*, et al, “Influence of ZnO interlayer on the performance of inverted organic photovoltaic device”, Sol. Energy Mater. Sol. Cells, accepted.
2. Ziyang Hu, Jianjun Zhang*, et al, “Performance of electron beam deposited tungsten doped indium oxide films as anodes in organic solar cells”, Sol. Energy Mater. Sol. Cells, accepted.
3. Ziyang Hu, Jianjun Zhang*, et al, “Influence of doped PEDOT:PSS on the performance of polymer solar cells”, Sol. Energy Mater. Sol. Cells, accepted.
4. Ziyang Hu, Jianjun Zhang* et al, Highly efficient organic photovoltaic devices using F-doped SnO2 anodes, Appl. Phys. Lett, 98, 123302 (2011).
5. 郝志紅,鬍子陽,張建軍*等,“摻雜PEDOT:PSS對聚合物太陽能電池性能影響的研究”,物理學報,已接收。
6. Jian Ni; Jianjun Zhang; Yu Cao; Xianbao Wang; Xinliang Chen; Xinhua Geng; Ying Zhao, “Low temperature deposition of high open-circuit voltage (>1.0V) p-i-n type amorphous silicon solar cells”, Sol. Energy Mater. Sol. Cells, accepted.
7. Ni Jian, Zhang Jian-Jun*, Cao Yu, Wang Xian-Bao, etc., “Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature”, Chinese Physics B, accepted.
8. 張亞萍,張建軍*,李文杰,耿新華,趙穎, “退火對活性層P3HT:PCBM性能的影響”, 太陽能學報, Vol. 32,No.2,220-224.
9. 李文杰1,2,張建軍1*,張亞萍1,鬍子陽1,郝秋艷2,趙穎1,耿新華1,“退火方式及PCBM陰極修飾層對聚合物太陽能電池性能的影響”,光電子雷射,Vol. 21, No. 11, 1602-1404。
10. 倪牮,張建軍*,王先寶,李林娜,侯國付,孫健,耿新華,趙穎,“低溫高速率沉積非晶矽薄膜及太陽電池”,光電子雷射,Vol. 21 No. 2,217-221.
11. 倪牮,陳新亮,曹麗冉,張建軍,薛俊明,孫健,王先寶,韓東港,張德坤,趙穎,耿新,“nip型非晶矽太陽電池中p/ITO界面特性研究”,光電子雷射,2010年第1期, Vol. 21, No.1, 55-58.
12. 倪牮,張建軍*,曹麗冉,李林娜,孫健,耿新華,趙穎, “氬電漿處理PET在非晶矽太陽電池中的套用”,光電子雷射,2009年第11期,Vol.20, No.11, 1417-1421.
13. 張亞萍,張建軍*,耿新華, 趙穎, “退火及摻雜對空穴傳輸層PEDOT:PSS電學特性的影響”,光電子雷射,2009年第10期,Vol.20, No.10, 1327-1331.
14. 張麗平,張建軍*,張鑫,孫健,趙穎;“襯底溫度對氫化微晶矽鍺薄膜生長的影響”,人工晶體學報,2009年04期,Vol. 38, No. 4, 831-835
15. Zhang Li-Ping(張麗平), Zhang Jian-Jun(張建軍)*, Shang Ze-Ren(尚澤仁),Hu Zeng-Xin(胡增鑫), Geng Xin-Hua(耿新華), and Zhao Ying(趙穎): “Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapor deposition”, Chinese Physics B, 2008, 17(9), 3448-3452.
16. 張麗平,張建軍*,張鑫,尚澤仁,胡增鑫,張亞萍,耿新華,趙穎,“H2, He混合稀釋生長微晶矽鍺薄膜”, 物理學報,2008, 57(11), 636-641.
17. Liping Zhang; Jianjun Zhang*; Xin Zhang; Zengxin Hu; Zeren Shang; Xinhua Geng; Ying Zhao, “Growth of μc-SiGe:H thin films diluted with helium and hydrogen by VHF-PECVD”, Photovolatic Specialists Conference, 2008. PVSC '08. 33rd IEEE, 11-16 May 2008 Page(s):1 – 4
18. Ze-ren Shang, Jian-jun Zhang*, Li-ping Zhang, Zeng-xin Hu, Jun-ming Xue, Ying Zhao and Xin-hua Geng,“P-μc-Si1−xGex:H thin film by VHF-PECVD”,Optoelectronics Letters,2008, 4(2),130-132.
19. 尚澤仁, 張建軍*, 張麗萍, 胡增鑫, 孫 建, 薛俊明, 趙 穎, 耿新華,“VHF-PECVD 法製備P 型微晶矽鍺的研究”,光電子雷射,2008,19(8),1060-1062.
20. Zhang, LP; Zhang, JJ*; Shang, ZR; Hu, ZX; Sun, J; Zhao, Y; Geng, XH, “SiGe : H thin films prepared by plasma assisted reactive thermal chemical vapor deposition”, PROCEEDINGS OF ISES SOLAR WORLD CONGRESS 2007: SOLAR ENERGY AND HUMAN SETTLEMENT, VOLS I-V1252-1256 2007
21. Shang, ZR; Zhang, JJ*; Zhang, LP; Hu, Z; Xue, JM; Zhao, Y; Geng, XH, “Study of P-mu c-Si1-xGex : H thin film by VHF-PECVD”, PROCEEDINGS OF ISES SOLAR WORLD CONGRESS 2007: SOLAR ENERGY AND HUMAN SETTLEMENT, VOLS I-V, 1257-1260 2007
22. 耿新華 張建軍,“矽基薄膜太陽電池新進展”,新材料產業,2007年7期
23. Zhang Jianjun, Hu Zengxin, Gu Shibin, Zhao Ying, Geng Xinhua: “Hydrogenation of Polycrystalline SiGe Thin Films by Hot Wire Technique”,(Chinese Journal of Semiconductors), Vol. 28, No. 3, Mar. 2007,
24. J. J. Zhang, K. Shimizu, Y. Zhao, J. M. Xue, X. H Geng, S. Z. Xiong, C. Y. Wu, J. Hanna:“influences of GeF4 on poly-SiGe films prepared by Reactive Thermal CVD”, Journal of Non-Crystalline Solids, Volume 352, Issues 9-20, 15 June (2006), Pages 1275-1278.
25. Jianjun Zhang, Kousaku Shimizu2, Ying Zhao1, Xinhua Geng1, Jun-ichi Hanna2, “Silicon-based narrow bandgap thin film semiconductor materials: polycrystalline SiGe prepared by reactive thermal CVD”, phys.stat.sol.(a), 203 (4) (2006), 760-775.
26. Jianjun Zhang, Kousaku Shimizu, Jun-ichi Hanna: “High Mobility Top-gate Thin Film Transistors Fabricated With Poly-Si1-xGex Thin Films on Glass Substrate”, Journal of Non-Crystalline Solids, 338-340, pp.740 (2004).
27. Jianjun Zhang, Kousaku Shimizu, Jun-ichi Hanna: “Growth and Characterization of Poly-SiGe prepared by Reactive Thermal CVD”, Material Research Society symposium proceedings, 2004 Vol. 808, A9.28.