人物經歷
2004年－2008年在中國兵器工業集團第二一一研究所工作。2010年畢業於上海大學，獲材料學專業博士學位。2010年10月進入桂林電子科技大學工作，
研究方向
半導體光電材料與器件（有機電致發光器件，薄膜電晶體器件，光學晶體材料）。
主要貢獻
作為主要成員曾參與國家自然科學基金項目4項，863項目1項，XX跨行業重點預研項目1項。在“J. Phys. D: Appl. Phys.”、“Thin Solid Films”、“Synthetic Metals”、“Semicond. Sci. Technol.”、“J. Cryst. Growth”和“Solid State Communications”等國際學術刊物發表了10多篇學術論文。
發表的部分論文：
[1] X.W. Zhang, X.Y. Jiang, M.A. Khan, J. Li, L. Zhang, J. Cao, W.Q. Zhu, Z.L. Zhang, Colour tunability of blue top-emitting organic light-emitting devices with single-mode resonance and improved performance by using C60 capping layer and dual emission layer, J. Phys. D: Appl. Phys. 42 (2009) 145106 (8pp)。
[2] X.W. Zhang, J. Li, L. Zhang, X.Y. Jiang, K. Haq, W.Q. Zhu, Z.L. Zhang, Top-emitting organic light-emitting device with high efficiency and low voltage using a silver-silver microcavity, Thin Solid Films 518 (2010) 1756-1759。
[3] X.W. Zhang, J. Li, M.A. Khan, L. Zhang, X.Y. Jiang, K. Haq, W.Q. Zhu, Z.L. Zhang, Improved chromaticity and electron injection in blue organic light-emitting device by using a dual electron-transport layer with hole-blocking function, Semicond. Sci. Technol. 24 (2009) 075021 (5pp)。
[4] X.W. Zhang, X.Y. Jiang, M.A. Khan, J. Cao, J.W. Ma, L. Zhang, J. Li, K. Haq, W.Q. Zhu, Z.L. Zhang, Enhanced electron injection in organic light-emitting devices by using a composite electron injection layer composed of 8-hydroquinolatolithium and cesium oxide, Solid State Communications 149 (2009) 652-656。
[5] X.W. Zhang, M.A. Khan, X.Y. Jiang, J. Cao, W.Q. Zhu, Z.L. Zhang, Electron injection property at the organic-metal interface in organic light-emitting devices revealed by current-voltage characteristics, Physica B 404 (2009) 1247-1250。
[6] X.W. Zhang, J. Li, L. Zhang, H.P. Lin, X.Y. Jiang, W.Q. Zhu, Z.L. Zhang, Improved performance of Si-based top-emitting organic light-emitting device using MoOx buffer layer, Synthetic Metals 160 (2010) 788-790。
[7] X.W. Zhang, Z. Zhao, P. Zhang, R.B. Ji, Q.B. Li, Comparison of CdZnTe crystals grown by the Bridgman method under Te-rich and Te-stoichiometric conditions and the annealing effects, J. Cryst. Growth 311 (2009) 286-291。
[8] X.W. Zhang, B.D. Ding, J. Li, L. Zhang, X.Y. Jiang, W.Q. Zhu, Z.L. Zhang, Red top-emitting organic light-emitting device using 6,13-di-(3,5-diphenyl) phenylpentacene doped emitting system, Solid State Communications 150 (2010) 1132-1135。
[9] J. Li, X.W. Zhang, L. Zhang, K. Haq, X.Y. Jiang, W.Q. Zhu, Z.L. Zhang, Performance enhancement of organic thin-film transistors using WO3-modified drain/source electrodes, Semicond. Sci. Technol. 24 (2009) 115012。
[10] J. Li, X.W. Zhang, L. Zhang, H. Zhang, X.Y. Jiang, K. Haq, W.Q. Zhu, Z.L. Zhang, MoOx interlayer to enhance performance of pentacene-TFTs with low-cost copper electrodes, Synthetic Metals 160 (2010) 376-379。
[11] J. Li, X.W. Zhang, L. Zhang, K. Haq, X.Y. Jiang, W.Q. Zhu, Z.L. Zhang, Improving organic transistor performance through contact-area-limited doping , Solid State Communications 149 (2009) 1826-1830。
[12] J. Li, X.W. Zhang, L. Zhang, H. Zhang, X.Y. Jiang, W.Q. Zhu, Z.L. Zhang, Effect of a SiNx insulator on device properties of pentacene-TFTs with a low-cost copper source/drain electrode, Semicond. Sci. Technol. 25 (2010) 045027。
[13] L. Zhang, J. Li, X.W. Zhang, X.Y. Jiang, Z.L. Zhang, High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature, Appl. Phys. Lett. 95 (2009) 072112。
[14] J. Li, X.W. Zhang, L. Zhang, H.P. Lin, H. Zhang, X.Y. Jiang, Z.L. Zhang, The feasibility of using an Al-alloy film as the source/drain electrode in a microcrystalline silicon thin-film transistor, Solid State Communications 150 (2010) 1560-1563。
[15] J. Li, L. Zhang, X.W. Zhang, H. Zhang, X.Y. Jiang, D.B. Yu, W.Q. Zhu, Z.L. Zhang, Reduction of the contact resistance in copper phthalocyanine thin film transistor with UV/ozone treated Au electrodes, Current Applied Physics 10 (2010) 1302-1305。
[16] L. Zhang, J. Li, X.W. Zhang, D.B. Yu, H.P. Lin, K. Haq, X.Y. Jiang, Z.L. Zhang, Low-voltage-drive and high output current ZnO thin-film transistors with sputtering SiO2 as gate insulator, Current Applied Physics 10 (2010) 1306-1308。
[17] L. Zhang, J. Li, X.W. Zhang, X.Y. Jiang, Z.L. Zhang, High-performance ZnO thin film transistors with sputtering SiO2/Ta2O5/SiO2 multi-layer gate dielectric, Thin Solid Films 518 (2010) 6130-6133。
[18] H.P. Lin, D.B. Yu, X.W. Zhang, J. Li, L. Zhang, X.Y. Jiang, Z.L. Zhang, Enhancing color purity and efficiency of white organic light-emitting diodes using a double-emitting layer, Semicond. Sci. Technol. 25 (2010) 105004。
